Designed for hot-swap circuits, the advanced power MOSFET delivers wide SOA and ultra-low ON-resistance—optimizing performance in AI servers, battery-powered equipment, and industrial power systems.
ROHM has introduced a new 100V power MOSFET, the RY7P250BM, specifically designed for use in 48V hot-swap circuits found in AI servers and industrial power supply systems. This component is crucial for applications demanding both battery protection and high energy efficiency, especially in the context of expanding AI workloads.
As generative AI and high-performance GPUs push data center energy consumption higher each year, there’s a growing shift from conventional 12V to more efficient 48V power architectures. Hot-swap circuits, used for safely replacing modules without shutting down the system, require MOSFETs that can handle high inrush currents and prevent damage during overloads. The latest device is engineered to meet these needs with outstanding performance in a compact 8080-size package.
The key specifications are:
- VDSS: 100 V
- IDSL: 300 A
- RDS(on) Max (VGS = 10V): 1.86 mΩ
- SOA Drain Current Tolerance (VDS = 48V): Pw = 10 ms: 16 A and 1 ms: 50 A
It stands out for its wide Safe Operating Area (SOA) and ultra-low ON-resistance of just 1.86mΩ, which is about 18% lower than comparable devices. This low resistance translates to reduced power loss and less heat generation, resulting in better energy efficiency and lower cooling requirements in server environments.
In performance terms, it can support 50A at 1ms and 16A at 10ms, enabling it to reliably handle high inrush currents that are common in AI server and data center applications. This makes it an ideal fit for power systems where conventional MOSFETs may fall short. The product has been endorsed by a leading global cloud platform provider, reinforcing its value in mission-critical server applications. It is expected to see wide adoption in next-gen AI infrastructure where performance, reliability, and energy efficiency are paramount.
